Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and <i> Ab Initio </i> Study
I. I. Klimovskikh, A. M. Shikin, M. M. Otrokov, A. Ernst, I. P. Rusinov, O. E. Tereshchenko, V. A. Golyashov, J. Sánchez-Barriga, A. Yu. Varykhalov, O. Rader, K. A. Kokh, E. V. Chulkov
Abstract
One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor, such 2DEG may be driven into a topologically non-trivial superconducting phase, predicted to support zero-energy Majorana fermion modes. Using angle-resolved photoemission spectroscopy and ab initio calculations, we study the 2DEG at the surface of the vanadium-doped polar semiconductor with a giant Rashba-type splitting, BiTeI. We show that the vanadium-induced magnetization in the 2DEG breaks time-reversal symmetry, lifting Kramers degeneracy of the Rashba-split surface state at the Brillouin zone center via formation of a huge gap of about 90 meV. As a result, the constant energy contour inside the gap consists of only one circle with spin-momentum locking. These findings reveal a great potential of the magnetically-doped semiconductors with a giant Rashba-type splitting for realization of novel states of matter.

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