18 papers · ranked by Valyu relevance
Cyril Léveillé, Kewin Desjardins, Horia Popescu, Boris Vondungbo + 8 more
'Marcel Hennes' 'Renaud Delaunay' 'Emmanuelle Jal' 'Dario De Angelis' 'Matteo Pancaldi' 'Emanuele Pedersoli' 'Flavio Capotondi' 'Nicolas Jaouen'] We demonstrate the possibility of using a CMOS 2D sensor for time-resolved pump-probe XUV FEL experiments. We gained a factor of 30 in acquisition time compared to the use of…
Jong-Ryul Yang, Seong-Tae Han, Donghyun Baek
We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential…
Moon-Jeong Lee, Ha-Neul Lee, Ga-Eun Lee, Seong-Tae Han + 3 more
'Dong-Woo Kang' 'Jong-Ryul Yang' 'Antonio Di Bartolomeo'] A complementary metal-oxide-semiconductor (CMOS) detector array is proposed to improve the sub-terahertz imaging resolution for objects in the conveyor belt system. The image resolution is limited to the implemented configuration, such as the wide spacing in the…
Nicola D’Ascenzo, Xi Zhang, Qingguo Xie
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our…
Xu Wang, Ting-Peng Li, Shu-Xia Yan, Jian Wang + 3 more
'Xiaodan Pang' 'Prakash Pitchappa'] Multiband terahertz (THz) detectors show great application potential in imaging, spectroscopy, and sensing fields. Thermal detectors have become a promising choice because they could sense THz radiations on the whole spectrum. This paper demonstrates the operation principle, module…
Gobinath Jegannathan, Volodymyr Seliuchenko, Thomas Van den Dries, Thomas Lapauw + 4 more
'Thomas Lapauw' 'Sven Boulanger' 'Hans Ingelberts' 'Maarten Kuijk' 'Kevin Gallacher'] This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more…
Jamie Alexander Ballin, Jamie Phillip Crooks, Paul Dominic Dauncey, Anne-Marie Magnan + 11 more
'Anne-Marie Magnan' 'Yoshinari Mikami' 'Owen Daniel Miller' 'Matthew Noy' 'Vladimir Rajovic' 'Marcel Stanitzki' 'Konstantin Stefanov' 'Renato Turchetta' 'Mike Tyndel' 'Enrico Giulio Villani' 'Nigel Keith Watson' 'John Allan Wilson'] In this paper we present a novel, quadruple well process developed in a modern 0.18 μm…
Banghe Zhu, Henry Jonathan, Agata Szłapa-Kula, Sławomir Kula
To translate near-infrared (NIR) and shortwave infrared (SWIR) fluorescence imaging into the clinic, the paired imaging device needs to detect trace doses of fluorescent imaging agents. Except for the filtration scheme and excitation light source, the image sensor used will finally determine the detection limitations…
Brian Aull, Edoardo Charbon
This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront…
Preethi Padmanabhan, Bruce Hancock, Shouleh Nikzad, L. Douglas Bell + 2 more
'Kees Kroep' 'Edoardo Charbon'] Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and…
Orit Skorka, Dileepan Joseph
Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing…
Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy + 12 more
'Todd Jones' 'Charles Shapiro' 'Nathan Bush' 'Shouleh Nikzad' 'David Morris' 'Katherine Lawrie' 'Jesper Skottfelt' 'Robert Henderson' 'Massimo Piotto' 'Johannes Solhusvik' 'R. Michael Guidash' 'Yusuke Oike'] Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging…
Susrutha Babu Sukhavasi, Suparshya Babu Sukhavasi, Khaled Elleithy, Shakour Abuzneid + 1 more
'Shakour Abuzneid' 'Abdelrahman Elleithy'] Recent technology advances in CMOS image sensors (CIS) enable their utilization in the most demanding of surveillance fields, especially visual surveillance and intrusion detection in intelligent surveillance systems, aerial surveillance in war zones, Earth environmental…
Le Yu, Yaozu Guo, Haoyu Zhu, Mingcheng Luo + 2 more
The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple…
Joshua Philippe Olorocisimo, Jeric Briones, Kiyotaka Sasagawa, Makito Haruta + 5 more
'Makito Haruta' 'Hironari Takehara' 'Hiroyuki Tashiro' 'Norihiro Ishida-Kitagawa' 'Yasumasa Bessho' 'Jun Ohta'] Title: Abstract. Significance: Gene expression analysis is an important fundamental area of biomedical research. However, live gene expression imaging has proven challenging due to constraints in conventional…
AMR M. MAGHRABY, IBRAHIM BOZYEL, ISLAM T. ABOUGINDIA, SUAT U. AY
The low-light performance of image sensors can be enhanced by designing high-effective conversion gain signal paths from photon conversion sites to chip outputs. This can be achieved by using high-gain in-pixel amplifiers, high-gain column amplifiers, and by reducing the conversion capacitance of photon-sensing nodes.…
Alberto Taffelli, Sandra Dirè, Alberto Quaranta, Lucio Pancheri + 1 more
Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong…
Abhinay Sandupatla, Subramaniam Arulkumaran, Ng Geok Ing, Shugo Nitta + 2 more
'Shugo Nitta' 'John Kennedy' 'Hiroshi Amano'] Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several…